首页|高导热氮化硅陶瓷基板影响因素研究现状

高导热氮化硅陶瓷基板影响因素研究现状

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  • 国家科技期刊平台
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  • NSTL
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电子电力技术的高度集成化对承载电子元器件的脆性陶瓷基板提出了更高的散热和强度要求.氮化硅陶瓷兼备优异的本征热导率和力学性能,在大功率半导体器件封装领域有广阔的发展前景.然而,目前商业及实验中可实现的氮化硅热导率远低于其本征热导率,如何在保证氮化硅优异力学性能的基础上提高热导率仍然是一个难题.本文概述了高热导氮化硅的发展近况,着重论述氮化硅实际热导率的影响因素和提高方法.同时对比了几种氮化硅烧结工艺的优劣情况,并简要介绍目前主流商业化的氮化硅陶瓷基板成型工艺,最后对氮化硅陶瓷基板发展方向作出展望.
Research Status on Influencing Factors of High Thermal Conductivity Si3N4 Ceramic Substrate
The high degree integration of electronic power technology has put forward higher requirements for heat dissipation and strength of brittle ceramic substrates carrying electronic components.Due to its excellent intrinsic thermal conductivity and mechanical properties,silicon nitride ceramics have broad development prospects in the field of high-power semiconductor device packaging.However,the thermal conductivity of Si3N4 that can be achieved in commercial and experimental studies is much lower than its intrinsic thermal conductivity,and how to improve the thermal conductivity of Si3N4 on the basis of ensuring its excellent mechanical properties is still a difficult problem.In this paper,the recent development of high thermal conductivity silicon nitride is summarized,and the influencing factors and improvement methods of the actual thermal conductivity of Si3N4 are emphatically discussed.At the same time,the advantages and disadvantages of several Si3N4 sintering processes are compared,and make a brief introduction of the current mainstream commercial Si3N4 ceramic substrate molding process.The development direction of Si3N4 ceramic substrate is prospected finally.

Si3N4high thermal conductivityceramic substratelattice oxygendensitygrain growth drivergrain growth morphologysintering process

朱允瑞、贺云鹏、杨鑑、周国相、林坤鹏、张砚召、杨治华、贾德昌、周玉

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哈尔滨工业大学特种陶瓷研究所,哈尔滨 150006

哈尔滨工业大学重庆研究院,重庆 401151

中国运载火箭技术研究院,北京 100076

哈尔滨工业大学(深圳)材料科学与工程学院,深圳 518055

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氮化硅 高导热 陶瓷基板 晶格氧 致密度 晶粒生长驱动力 晶粒生长形貌 烧结工艺

中央高校基本科研业务费专项资金国家重点研发计划项目&&

2022FRFK0600XX2022YFB3706300CQYC20220301577

2024

硅酸盐通报
中国硅酸盐学会 中材人工晶体研究院

硅酸盐通报

CSTPCD北大核心
影响因子：0.698
ISSN：1001-1625
年,卷(期)：2024.43(7)
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