SiC及其复合材料的发展与应用
Development and Applications of SiC and Its Composite Materials
刘瑞兆 1关康1
作者信息
- 1. 华南理工大学 材料科学与工程学院 广东 510640
- 折叠
摘要
碳化硅(Silicon Carbide,SiC)作为第三代半导体材料,因其出色的物理和化学性质在众多领域展现出巨大应用潜力.从结构(Structure)、性质(Properties)、应用(Applications)3 个方面介绍了SiC材料,对SiC材料在半导体行业中的应用现状和发展前景进行了简要综述,为SiC材料的研究提供了新视角.
Abstract
Silicon carbide(SiC)as a third-generation semiconductor material,exhibits tremendous potential for many applications.SiC was introduced from three aspects:Structure,properties,and applications.It provides a concise overview of the current state and future prospects of SiC materials in the semiconductor industry,offering a new perspective for the research on SiC materials.
关键词
SiC/第三代半导体/新能源汽车/光伏/航空航天Key words
SiC/third-generation semiconductors/new energy vehicles/photovoltaics/aerospace引用本文复制引用
出版年
2025
NETL
NSTL
万方数据