黑龙江科学2024,Vol.15Issue(8) :21-24,27.

半导体材料纳米结构性能研究

Study on Nanostructural Properties of Semiconductor Materials

闻邦语
黑龙江科学2024,Vol.15Issue(8) :21-24,27.

半导体材料纳米结构性能研究

Study on Nanostructural Properties of Semiconductor Materials

闻邦语1
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作者信息

  • 1. 合肥工业大学,合肥 230009
  • 折叠

摘要

研究了半导体材料纳米结构的性能,包括电子传输性能、光学性质和热学性能,对硅和氮化镓纳米结构的电子迁移率、光学吸收与光散射特性及热导率进行测量分析.实验表明,纳米结构的性能受到尺寸效应的显著影响,硅纳米线和氮化镓纳米结构表现出优异的电子传输及光学性质.通过热导率分析发现,硅和氮化镓纳米结构在热学性能方面存在差异,对纳米结构的温度稳定性进行研究,为其在高温中的应用提供参考.

Abstract

The study analyzes the properties of nanostructures of semiconductor materials,including electron transport properties,optical properties and thermal properties;and measures and analyzes the electron mobility,optical absorption and light scattering properties,and thermal conductivity of silicon and gallium nitride nanostructures.The experiment shows that the properties of nanostructures are significantly influenced by the size effect,and silicon nanowires and gallium nitride nanostructures present excellent electron transport and optical properties.Through thermal conductivity analysis,it is found that there are differences in thermal properties between silicon and gallium nitride nanostructures.The temperature stability of nanostructures is studied to provide reference for their application in high temperature.

关键词

半导体材料/纳米结构/电子传输性能/光学特性/热导率

Key words

Semiconductor materials/Nano-structure/Electron transport performance/Optical property/Heat conductivity

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出版年

2024
黑龙江科学
黑龙江省科学院

黑龙江科学

影响因子:1.014
ISSN:1674-8646
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参考文献量19
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