InSb-In共晶体磁阻薄膜的制备及特性分析
Preparation and Characteristic Analysis of InSb-In Eutectic Magnetoresistance Film
李锋1
作者信息
摘要
利用纯度为99.99％的铟和锑单质为原料,采用真空蒸发法,制备了InSb-In共晶体磁阻薄膜,对薄膜进行热处理.通过实验对锑化铟薄膜的物相构成、表面形貌进行分析,探讨成膜条件、退火条件等因素对薄膜结构及性能的影响.结果表明,InSb薄膜是InSb和In的共晶体.
Abstract
InSb-In eutectic magnetoresistance film is prepared by vacuum evaporation method from 99.99％indium and antimony,and the film is then subiected to heat treatment.The study analyzes the phase composition and the surface modalit of the film,investigates the effects of film-forming and annealing conditions to the microstructure.The results show that the film is the ertectic of In and InSb.
关键词
InSb薄膜/真空蒸发/热处理/灵敏度Key words
InSb film/Vacuum evaporation/Heat treatment/Sensitivity引用本文复制引用
出版年
2024
NETL
NSTL
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