首页|金刚石与硅烧结制备金刚石碳化硅陶瓷基复合材料研究

金刚石与硅烧结制备金刚石碳化硅陶瓷基复合材料研究

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为了提高金刚石材料的耐磨性和使用寿命,以Si3N4为基体材料,利用CVD生长的金刚石粉作为增强相制备了金刚石/碳化硅陶瓷基复合材料.对SiC/Ce-SiC/Si3N4陶瓷基复合材料的烧结过程进行研究,探讨烧结温度、保温时间等对其显微结构及力学性能的影响.结果表明,随着烧结温度的升高,复合材料的致密度不断提高,当烧结温度为1000 ℃时,复合材料的致密度最高,达98.7%,烧结温度越高,SiC颗粒团聚现象越严重,且晶粒尺寸越小,在保温时间为20 min时,复合材料达到致密化状态,此时复合材料中含有较多的SiC颗粒.通过优化工艺参数可制备出具有优异性能的金刚石/碳化硅陶瓷基复合材料,满足航空航天领域的使用要求.
Research on the Preparation of Diamond Silicon Carbide Ceramic Matrix Composites by Sintering Diamond and Silicon
In order to improve the wear resistance and service life of diamond materials,the study prepares diamond/silicon carbide ceramic matrix composites using Si3N4 as the matrix material and diamond powder grown by CVD as the reinforcing phase.The study analyzes sintering process of SiC/Ce-SiC/Si3N4 ceramic matrix composites,and explores the effects of sintering temperature,holding time,etc.on their microstructure and mechanical properties.The results indicate that,as the sintering temperature increases,the density of the composite material continues to increase.When the sintering temperature is 1000 ℃,the density of the composite material is the highest,reaching 98.7%.The higher the sintering temperature is,the more severe the agglomeration phenomenon of SiC particles and the smaller the grain size are.When the insulation time is 20 min,the composite material reaches a dense state,and at this time,the composite material contains more SiC particles.Therefore,by optimizing process parameters,diamond/silicon carbide ceramic matrix composites with excellent performance can be prepared to meet the requirements of aerospace applications.

Diamond/silicon carbideLiquid phase silicon infiltration processMechanical propertiesThermal properties

黄诏、金鹏程、杜震宇、李鹤

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新疆大学,乌鲁木齐 830046

金刚石/碳化硅 液相渗硅工艺 力学性能 热学性能

2025

黑龙江科学
黑龙江省科学院

黑龙江科学

影响因子:1.014
ISSN:1674-8646
年,卷(期):2025.16(2)