Preparation and Application of Three-Dimensional Micro-Tubes for 7.5 μm-Pitch Infrared Detectors
A fabrication process for three-dimensional micro-tubes was developed using existing readout cir-cuit electrode growth equipment and direct-write photolithography system.In the preparation process,the three-dimensional micro-tubes were first prepared on the surface of the readout circuit.The indium bumps were grown on the HgCdTe chip,and then flip-chip bonding was used to achieve interconnections between the 1k×1k array HgCdTe chip with 7.5 μm pitch and the readout circuit.The controllable parameters include metal growth angle,growth rate,thickness,and metal type,etc.It is found that the height of the three-di-mensional micro-tubes with 7.5 μm pitch prepared by this process can reach 3.8 μm,the height non-uniformi-ty is less than 3%,and it can withstand the pressure of 7.6 ×10-5 N.The application of the three-dimensional micro-tubes reduces the requirements for the flatness of HgCdTe chips and the precision of interconnection e-quipment in the flip-chip bonding process,significantly improving the yield of interconnected infrared detectors with 7.5 μm pitch.