二氧化硅(SiO2)薄膜因其卓越的光学性能,在半导体器件、集成电路、光学涂层等领域具有巨大的应用潜力.然而,SiO2薄膜制备过程中面临表面粗糙度、杂质控制和致密性等问题.为解决这些问题,研究者们通过工艺改进和表面修饰等手段来提高SiO2薄膜的性能.在众多SiO2薄膜制备技术中,等离子体增强化学气相沉积(Plasma-Enhanced Chemical Vapor Deposition,PECVD)技术由于沉积SiO2薄膜所需温度低、原位生长等优势,成为制备SiO2薄膜最常用的方法.综述了用PECVD技术制备SiO2薄膜的发展历程,并探讨了关键工艺参数和后处理工艺对薄膜质量的影响.对PECVD技术的深入研究,有助于实现对SiO2薄膜生长的更精准控制,进一步拓展其广泛的应用前景.
Research Progress on the Preparation of SiO2 Thin Films Based on PECVD
Silica(SiO2)thin films have enormous potential for applications in semiconductor devices,integrat-ed circuits,optical coatings,and other fields due to their excellent optical properties.However,the prepara-tion process of SiO2 thin films faces some issues such as surface roughness,impurity control,and compact-ness.To address these issues,researchers have improved the performance of SiO2 thin films through process improvements and surface modifications.Among the many techniques for preparing SiO2 thin films,plasma enhanced chemical vapor deposition(PECVD)has become the most commonly used method for preparing SiO2 thin films due to its advantages such as low temperature required for deposition and in-situ growth.This arti-cle reviews the development of preparing SiO2 thin films using PECVD technology,and explores the influence of key process parameters and post-treatment processes on the quality of the films.The in-depth study of PECVD technology helps to achieve more precise control of SiO2 film growth and further expand its broad ap-plication prospects.
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