Research Progress of Field Effect Transistor Terahertz Detector in Terahertz Imaging(I)
Terahertz(THz)waves have characteristics such as low energy,strong penetration,and high res-olution.Therefore,THz imaging technology has broad prospects in areas such as security inspection,medical diagnosis,and non-destructive testing.As an important component of THz imaging systems,the performance of THz detectors has a significant impact on imaging resolution and speed.Field effect transistor(FET)THz detectors,due to their characteristics of room temperature operation,easy large-scale integration,and fast re-sponse speed,have enormous potential in imaging applications.This paper reviews the research progress of FET THz detectors in the field of THz imaging in recent years,including advances in imaging arrays,material selection,and analysis of existing design and manufacturing issues.It points out that the antenna and pixel spacing are important factors limiting large-scale arraying.Based on this,it provides an outlook on future re-search directions,indicating that new materials and structural designs will further improve device performance,achieving faster and clearer THz imaging.
terahertz imagingfield effect transistorterahertz detectorHEMTCMOSlow dimensional material
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