采用CdTe/ZnS双层钝化工艺对长波HgCdTe衬底进行表面钝化及工艺优化,并利用不同的工艺条件进行背面增透膜生长.通过对各工艺条件下制备的二极管器件膜层进行扫描电子显微镜(Scanning Electron Microscope,SEM)、原子力显微镜(Atomic Force Microscope,AFM)、I-V表征分析,研究了不同工艺条件下沉积CdTe/ZnS膜层的致密度对器件性能的影响.结果表明,致密度更高的CdTe/ZnS钝化膜层均匀,具有更好的表面状态;致密度更高的背面增透膜层附着力更强,表面缺陷更少,制备出的LW640-15探测器具有更高的性能.
Study on the Influence of CdTe/ZnS Film Density on the Performance of HgCdTe Devices
The CdTe/ZnS double-layer passivation process was used to passivate the surface of the long-wave HgCdTe substrate and optimize the process,and different process conditions were used to grow the backside anti-reflection film.The film layers of the diode devices prepared under various process conditions were charac-terized by scanning electron microscope(SEM),atomic force microscope(AFM)and I-V curves,and the effect of the density of the CdTe/ZnS film layer deposited under different process conditions on the device per-formance was studied.The results show that the CdTe/ZnS passivation film layer with higher density is uni-form and has a better surface state;the backside anti-reflection film layer with higher density has stronger ad-hesion and fewer surface defects,and the prepared LW640-15 detector has higher performance.
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