Imaging Ultraviolet Light-Induced Oxygen Vacancy Diffusion on TiO2(110)Surface
We report here scanning tunneling microscopy(STM)observations of bridge-bonded oxygen vacancies(OVs)on the TiO2(110)surface dif-fusing under the influence of 266 nm ultraviolet(UV)laser irradiation.OV pairs,and even OV trimers,were formed as a result of UV light-in-duced OV diffusion.There are two stable STM representations of the OV-pair defects,which are inter-changeable during scanning.An ex-tended irradiation time(68 min)can lead to the formation of a TiO2(110)surface with pre-dominant OV-pair point defects.Our results enrich the understanding of OV behavior upon UV irradiation,and future photocatalytic studies on reduced rutile TiO2(110)surfaces involv-ing 266 nm UV light can benefit from the knowledge of the observed diffusion of OVs and the formation of OV oligomers.We also provide a plausible way to prepare an OV-pair abundant TiO2(110)surface,a requisite for further investigations of the otherwise unapproachable de-fects.
万方数据
维普
