A method for monitoring junction temperature of IGBT module based on turn-off voltage
The precise junction temperature monitoring is of paramount importance for enhancing the reliability of insulated gate bipolar transistor(IGBT)modules and extending the lifespan of devices.This paper introduces a method for monitoring junction temper-ature of IGBT modules based on turn-off voltages(TOV),which highlights resistance to load currents.The study initially verified the ra-tionality of using TOVs as a temperature-sensitive electrical parameter.The deep neural network(DNN)technology was subsequently employed to eradicate the dependence of TOVs on load currents,facilitating accurate junction temperature prediction under varying oper-ational conditions.The proposed method was validated through a single-phase pulse width modulation(PWM)experiment.The findings reveal an error range of±5℃for this method,demonstrating the feasibility of optimizing junction temperature monitoring through DNN utilization.
insulated gate bipolar transistor(IGBT)junction temperature monitoringdeep neutral network(DNN)temperature-sensitive parameterturn-off voltage(TOV)
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