A simplified junction temperature curve calculation method for IGBT
This paper introduces a simplified junction temperature curve method for insulated gate bipolar transistors(IGBTs),through the utilization of the discrete integral principle.By quantifying junction temperatures within the fundamental wave period,this approach enables the conversion of junction temperature fluctuation curves containing detailed junction temperature information into simplified representations containing only key junction temperature information.The proposed method exhibited high calculation accura-cy,as well as the capacity to rapidly determine maximum and minimum junction temperatures and their corresponding occurrence times,thus greatly reducing the calculation burden.A simulation analysis of junction temperature fluctuations at different fundamental wave fre-quencies proved the effectiveness in reflecting junction temperature fluctuations and high calculation accuracy of the proposed method.Furthermore,a comparison with other junction temperature calculation methods highlighted the obvious advantages of the proposed method in terms of calculation speed,and its particular suitability for calculations on long time scales.Finally,the accuracy of the pro-posed method was verified by measuring junction temperature fluctuations in a power assessment test.
junction temperature fluctuation within fundamental wave periodsimplified junction temperature curveIGBTequivalent sinusoidal half-wave lossequivalent thermal circuit method