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Electrochemical anodic oxidation assisted fabrication of memristors

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Owing to the advantages of simple structure,low power consumption and high-density integration,memristors or memristive devices are attracting increasing attention in the fields such as next generation non-volatile memories,neuromorphic computation and data encryption.However,the deposition of memristive films often requires expensive equipment,strict vacuum conditions,high energy consumption,and extended processing times.In contrast,electrochemical anodizing can produce metal oxide films quickly(e.g.10 s)under ambient conditions.By means of the anodizing technique,oxide films,oxide nanotubes,nanowires and nanodots can be fabricated to prepare memristors.Oxide film thickness,nanostructures,defect concentrations,etc,can be varied to regulate device performances by adjusting oxidation parameters such as voltage,current and time.Thus memristors fabricated by the anodic oxidation technique can achieve high device consistency,low variation,and ultrahigh yield rate.This article provides a comprehensive review of the research progress in the field of anodic oxidation assisted fabrication of memristors.Firstly,the principle of anodic oxidation is introduced;then,different types of memristors produced by anodic oxidation and their applications are presented;finally,features and challenges of anodic oxidation for memristor production are elaborated.

anodic oxidationanodized aluminium oxidememristorresistive switchingelectrical properties

Shuai-Bin Hua、Tian Jin、Xin Guo

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School of Materials Science and Engineering,State Key Laboratory of Material Processing and Die &Mould Technology,Huazhong University of Science and Technology,Wuhan 430074,People's Republic of China

National Key Research and Development Program of ChinaNatural Science Foundation of Hubei Province,ChinaDongguan Innovative Research Team Program

2018YFE02038022022CFA0312020607101007

2024

10.1088/2631-7990/ad2c61

极端制造(英文)

极端制造(英文)

CSTPCDEI
ISSN：
年,卷(期)：2024.6(3)
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