首页|Piezotronic neuromorphic devices:principle,manufacture,and applications

Piezotronic neuromorphic devices:principle,manufacture,and applications

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With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck.Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner,with the capability to sense/store/process information of external stimuli.In this review,we have presented the piezotronic neuromorphic devices(which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure)and discussed their operating mechanisms and related manufacture techniques.Secondly,we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications,including bionic sensing,information storage,logic computing,and electrical/optical artificial synapses.Finally,in the context of future development,challenges,and perspectives,we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively.It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things,AI,biomedical engineering,etc.

piezotronicsneuromorphic devicesstrain-gated transistorspiezoelectric nanogeneratorssynaptic transistors

Xiangde Lin、Zhenyu Feng、Yao Xiong、Wenwen Sun、Wanchen Yao、Yichen Wei、Zhong Lin Wang、Qijun Sun

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Department of Research,Shanghai University of Medicine and Health Sciences Affiliated Zhoupu Hospital,Shanghai 201318,People's Republic of China

Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 101400,People's Republic of China

Center on Nanoenergy Research,School of Chemistry and Chemical Engineering,Guangxi University,Nanning 530004,People's Republic of China

Georgia Institute of Technology,Atlanta,GA 30332-0245,United States of America

Shandong Zhongke Naneng Energy Technology Co.,Ltd,Dongying 257061,People's Republic of China

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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Key Research and Development Program of ChinaBeijing Nova ProgramFundamental Research Funds for the Central Universitiesthe'Hundred Talents Program' of the Chinese Academy of Sciences

52073031220081512021YFB3200304Z211100002121148E0EG6801X2

2024

10.1088/2631-7990/ad339b

极端制造(英文)

极端制造(英文)

CSTPCDEI
ISSN：
年,卷(期)：2024.6(3)
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