Research on active quenching circuit based on single-photon detection of 4H-SiC APD
In order to compare the effects of different types of quenching circuits on the detection performance of 4H-SiC avalanche photodiodes(APD),single-photon detection experiments were conducted on two types of SiC ultraviolet APD by using passive quenching circuits(PQC)and active quenching circuits(AQC).It was found that during a long dead time in PQC,post pulse phenomena occur frequently,resulting in a higher dark counting rate(DCR)of APD,thereby reducing the signal-to-noise ratio of the device.A study was conducted on the time distribution of pulse probability after APD,and further analysis was conducted on the problems encountered by AQC in single-photon detection under higher device bias.A circuit improvement plan was proposed.The research results indicate that by adjusting the dead time of AQC to 45 ns,the device DCR can be reduced to 1/4 of the original level under the same single-photon detection efficiency.By effectively suppressing post pulse and accelerating APD recovery speed,AQC can enable the device to exhibit superior detection performance.This study provides a certain reference for the application of SiC APD in single-photon detection.
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维普
