Cr2O3掺杂量对SnO2压敏电阻微观结构和电气性能的影响
Effect of Cr2O3 Doping Amount on Microstructure and Electrical Properties of SnO2 Varistor
郝亚超 1赵洪峰 1谢清云2
作者信息
- 1. 新疆大学电气工程学院,乌鲁木齐 830046
- 2. 西安西电避雷器有限责任公司,西安 710200
- 折叠
摘要
以SnO2粉、CuO粉、Nb2O5粉、Cr2O3粉为原料,采用粉末冶金技术烧结制备(98.95-x)SnO2-1CuO-0.05Nb2O5-xCr2O3(x=0,0.01,0.02,0.03,0.05,物质的量分数/％)压敏电阻,研究了 Cr2O3掺杂量对该压敏电阻微观结构和电气性能的影响.结果表明:随着Cr2O3掺杂量的增加,烧结试样的相对密度、收缩率、平均晶粒尺寸均先增大后减小,当Cr2O3物质的量分数为0.02％时相对密度和收缩率最高,Cr2O3物质的量分数为0.01％时晶粒尺寸最大,粒径分布最均匀;随着Cr2O3掺杂量增加,SnO2压敏电阻的电压梯度增大,泄漏电流密度先减小后增大,非线性系数则先增大后减小,当Cr2O3物质的量分数为0.02％时,压敏电阻的泄漏电流密度最小,非线性系数最大,电压梯度较高,综合电气性能最好.
Abstract
With SnO2 powder,CuO powder,Nb2O5 powder and Cr2O3 powder as raw materials,(98.95-x)SnO2-1CuO-0.05Nb2O5-xCr2O3(x=0,0.01,0.02,0.03,0.05,mole fraction/％)varistor was prepared by powder metallurgy technique.The effect of Cr2O3 doping amount on the microstructure and electrical properties of the varistor was studied.The results show that with the increase of Cr2O3 doping amount,the relative density,shrinkage rate and average grain size of sintering samples first increased and then decreased.When the Cr2O3 mole fraction was 0.02％,the relative density and shrinkage rate of sintering sample were both the highest.When the Cr2O3 mole fraction was 0.01％,the grain size was the largest and the particle size distribution was the most uniform.With the increase of Cr2O3 doping amount,the voltage gradient of SnO2 varistor increased,the leakage current density decreased first and then increased,and the nonlinear coefficient increased first and then decreased.When the mole fraction of Cr2O3 was 0.02％,the leakage current density was the smallest,the nonlinear coefficient was the largest,and the voltage gradient was high,indicating the best comprehensive electrical performance.
关键词
SnO2基压敏电阻/Cr2O3/电气性能/微观结构Key words
SnO2 base varistor/Cr2O3/electrical property/microstructure引用本文复制引用
基金项目
新疆维吾尔自治区自然科学基金资助项目(2022D01C21)
出版年
2024
NETL
NSTL
万方数据