Effect of SiO2 Doping Amount on Electrical Performance of SnO2 Varistor
SnO2 varistor doped with SiO2 of different mole fractions(0.01％,0.05％,0.10％,0.15％,0.20％)was prepared by traditional method.The effect of SiO2 doping amounts on the electrical performance of SnO2 varistor was studied.The results show that with the increase of SiO2 doping amounts,the voltage gradient,nonlinear coefficient,barrier height,donor density and interfacial state density of SnO2 varistor first increased and then decreased,the leakage current density first decreased and then increased,and the grain boundary resistance increased.When the mole fraction of SiO2 was 0.10％,the SnO2 varistor had the best comprehensive electrical performance,with the largest voltage gradient,nonlinear coefficient,donor density,interfacial state density and the barrier height,and the smallest leakage current density,which were 582 V·mm-1,33,1.7×1023 m-3,6.7×1016 m-2,2.03 eV,7.06 μA·cm-2,respectively.
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