SiO2掺杂量对SnO2压敏电阻电气性能的影响
Effect of SiO2 Doping Amount on Electrical Performance of SnO2 Varistor
石钤文 1赵洪峰 1谢清云 2蒙晓记2
作者信息
- 1. 新疆大学电气工程学院,电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,乌鲁木齐 830046
- 2. 西安西电避雷器有限责任公司,西安 710200
- 折叠
摘要
采用传统方法制备了掺杂不同物质的量分数(0.01％,0.05％,0.10％,0.15％,0.20％)SiO2的SnO2压敏电阻,研究了 SiO2掺杂量对SnO2压敏电阻电气性能的影响.结果表明:随着SiO2掺杂量的增加,SnO2压敏电阻的电压梯度、非线性系数、势垒高度、施主密度和界面态密度均先增大后减小,泄漏电流密度先减小后增大,晶界电阻增大;当SiO2物质的量分数为0.10％时,SnO2压敏电阻的综合电气性能最佳,其电压梯度、非线性系数、施主密度、界面态密度、势垒高度最大,泄漏电流密度最小,分别为 582 V·mm-1,33,1.7×1023 m-3,6.7×1016 m-2,2.03 eV,7.06 μA·cm-2.
Abstract
SnO2 varistor doped with SiO2 of different mole fractions(0.01％,0.05％,0.10％,0.15％,0.20％)was prepared by traditional method.The effect of SiO2 doping amounts on the electrical performance of SnO2 varistor was studied.The results show that with the increase of SiO2 doping amounts,the voltage gradient,nonlinear coefficient,barrier height,donor density and interfacial state density of SnO2 varistor first increased and then decreased,the leakage current density first decreased and then increased,and the grain boundary resistance increased.When the mole fraction of SiO2 was 0.10％,the SnO2 varistor had the best comprehensive electrical performance,with the largest voltage gradient,nonlinear coefficient,donor density,interfacial state density and the barrier height,and the smallest leakage current density,which were 582 V·mm-1,33,1.7×1023 m-3,6.7×1016 m-2,2.03 eV,7.06 μA·cm-2,respectively.
关键词
SnO2压敏电阻/电气性能/电压梯度/势垒高度Key words
SnO2 varistor/electrical performance/voltage gradient/barrier height引用本文复制引用
基金项目
新疆维吾尔自治区自然科学基金(2022D01C21)
出版年
2024
NETL
NSTL
万方数据