Study on Modification Mechanism of Picosecond Laser Ablation of Silicon Carbide
Silicon carbide materials are widely used in high temperature,high frequency and high power electronic devices thanks to their excellent comprehensive propertiesl,their high hardness and chemical inertness,however,pose challenges to the current polishing technology.Different lasers with different laser fluence and scanning speed are used to scan SiC.The SEM results show that with the increase of energy fluence,the nanoparticles on the surface of the material change from disorder to order and then to melting.The results of EDS and nanoindentation analysis indicate that oxygen participates in the photochemical reaction of laser on SiC,the elastic modulus of irradiated surface decreases from 347 GPa to 103.82 GPa and the shear strength decreases from 20.90 GPa to 17.25 GPa.This research has important significance for further explorating the modification process of picosecond laser on SiC.
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