科技导报2024,Vol.42Issue(8) :21-28.DOI:10.3981/j.issn.1000-7857.2023.06.00884

双光束超分辨光刻技术的发展和未来

Development and future of dual-beam super-resolution lithographic technology

谢大乐 艾星星 甘棕松
科技导报2024,Vol.42Issue(8) :21-28.DOI:10.3981/j.issn.1000-7857.2023.06.00884

双光束超分辨光刻技术的发展和未来

Development and future of dual-beam super-resolution lithographic technology

谢大乐 1艾星星 2甘棕松1
扫码查看

作者信息

  • 1. 华中科技大学武汉光电国家研究中心,武汉 430074;华中科技大学信息存储系统教育部重点实验室,武汉 430074
  • 2. 黄冈师范学院化学化工学院,黄冈 438000
  • 折叠

摘要

近年来,随着芯片制造工艺的不断提高,光刻技术发展面临着一些难题,这些难题也影响着芯片行业发展及摩尔定律的持续性.然而,当前主流的极紫外光刻技术已经接近制造极限,需要更先进的技术来突破技术瓶颈.综述了基于双光束超分辨技术的光刻技术概念,并分析了其优势和潜力,同时提出了该技术面临的挑战和可能的解决方案,指出这种新型光刻技术有望在微纳制造领域扮演重要的角色.

Abstract

In recent years,with continuous improvement of chip manufacturing technology,the development of lithography technology is facing some difficulties,which also affect the development of chip industry and the sustainability of Moore's Law.However,current mainstream extreme ultraviolet lithography technology is close to the manufacturing limit,and more advanced technology is needed to break through the technical bottleneck.In this paper,the concept of lithography based on dual-beam super-resolution technology is reviewed,and its advantages and potential are analyzed.At the same time,the challenges and possible solutions of this technology are proposed.This new lithography technology is expected to play an important role in the field of micro-nano manufacturing.

关键词

芯片制造/光刻技术/双光束/超分辨

Key words

chip manufacturing/lithography technology/double beam/super-resolution

引用本文复制引用

基金项目

国家重点研发计划专项(2021YFB2802000)

出版年

2024
科技导报
中国科学技术协会

科技导报

CSTPCD北大核心
影响因子:0.559
ISSN:1000-7857
参考文献量27
段落导航相关论文