PECVD synthesis of graphene toward wide applications:Progress and prospects
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石墨烯因其优异的物理/化学特性,在众多领域有着广泛的应用前景.为了推动石墨烯材料的实际应用,需要寻找稳定可靠、可扩展和低成本的石墨烯材料制备方法.等离子体增强化学气相沉积(plasma-enhanced chemical vapor deposition,PECVD)技术是一种借助外加能量辅助反应前驱体裂解产生等离子体,进而实现石墨烯制备的方法.PECVD技术在沿袭了传统化学气相沉积法工艺产物设计性强、反应途径灵活、可批量化、高品质制备石墨烯等优点的基础上,可以实现石墨烯在更低的生长温度、更多样化的生长衬底上以更快的生长速度制备合成,从而能够有效降低能耗,提高制备效率,拓展石墨烯的应用场景.本文综述了近年来利用不同等离子体源(射频、直流和微波)PECVD技术制备石墨烯的研究进展,讨论了其生长机理,以及PECVD制备石墨烯在储能、器件散热和光热转化等相关领域的应用,进一步对PECVD技术在石墨烯制备和应用中面临的挑战和未来的发展前景进行了总结.
Graphene,as a two-dimensional crystalline nanomaterial formed by sp2-hybridized carbon atoms,has hold tremendous potential for various applications owing to its excellent electrical/thermal conductivity,large specific surface area,and high transparency.To promote the practical applications of graphene,numerous synthetic methods for graphene have been explored,e.g.,liquid-phase exfoliation,SiC thermal decomposition,chemical vapor deposition(CVD)and so on.Specifically,the CVD approach has received extensive attention for the preparation of high-quality graphene with high controllability and compatibility.However,the high growth temperature and tedious transfer process from growth substrates onto target substrates severely hinder the development of graphene.To address these challenges and promote the widespread utilization of graphene,it is imperative to seek effective synthetic methods for the achievement of high-quality graphene growth on arbitrary surfaces and at low temperatures.Plasma-enhanced chemical vapor deposition(PECVD)technique offers a promising approach for graphene synthesis by introducing external energy to facilitate the decomposition of precursor molecules.With the assistance of plasma,a rich chemical environment comprising a mixture of radicals,molecules,and ions derived from reaction precursors are formed.This enables the preparation of graphene at lower growth temperatures on more diverse substrates,thereby reducing energy consumption,improving production efficiency,further expanding the application scenarios of graphene.In this review,we summarize the recent progress of PECVD synthesis of graphene toward wide applications.Initially,three different plasma systems consisting of radio-frequency PECVD(RF-PECVD),direct-current PECVD(DC-PECVD),and microwave PECVD(MW-PECVD)are categorized in terms of the plasma generation sources.Through regulating the equilibrium states between etching and deposition during PECVD growth process,the graphene morphology can be affected.The role of plasma in the PECVD growth mechanisms for two-dimensional graphene films and three-dimensional graphene nanosheets are specifically discussed.The second part focuses on the recent advances of graphene synthesized by RF-PECVD,DC-PECVD,and MW-PECVD techniques,respectively.Among these,RF-PECVD demonstrates significant superiority in the aspect of production cost and material quality.Benefiting from the parallel glow discharging in DC-PECVD equipment,large-scale and uniform synthesis of graphene becomes achievable.For MW-PECVD systems,the high-energy characteristic of microwave plasma contributes the rapid and high-yield synthesis of graphene materials.Particularly,the three-dimensional graphene nanosheets obtained by PECVD approach present unique vertical orientation,exoteric porous structure,high specific surface area,and abundant active edges.Inheriting the performance advantages of PECVD-derived graphene,potential applications of graphene in diverse fields such as energy storage,device heat dissipation,and photothermal conversion are then concluded.Finally,the challenges faced by PECVD technology in graphene synthesis and applications,as well as the future directions for the design and development prospects are outlined.
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