作为现代信息社会的物理基石,以硅基材料为核心的集成电路极大推动了人类现代文明的进程.但是,随着晶体管特征尺寸微缩逐渐接近物理极限,传统硅基材料出现了电学性能衰退、异质界面失稳等挑战,导致集成电路数据处理能力提升难、功耗急剧增加等问题产生.超薄二维过渡金属硫族化合物(transition metal dichalcogen-ides,TMDCs)具有表面平整无悬挂键、电输运性能优异、静电控制力强、化学性质稳定等优势,可有效解决上述问题,被认为是后摩尔时代集成电路的最具潜力候选材料之一.目前,二维TMDCs集成电路研究在多个关键领域均取得了突破性成果,但距离产业化应用仍需要克服一些挑战.本文着重介绍了二维TMDCs材料与电子器件在集成电路应用的各方面优势,系统阐明了二维TMDCs集成电路在材料控制生长、范德华界面优化以及器件设计构筑等方面的关键科学问题,提出了相应解决办法和应对措施,分析了二维TMDCs集成电路产业化进程中的综合性挑战,明确了"与硅基技术兼容"二维TMDCs集成电路发展路线的优势、可行性与突破方向.
Two-dimensional transition metal dichalcogenide electronic devices compatible with silicon-based technology
For over half a century,Moore's Law has successfully promoted the deep integration of semiconductor science,industrial technology,and social capital,stimulating the rapid development of the integrated circuit industry and accelerating the progress of human beings from the Information Age to the Artificial Intelligence Age.However,with the advent of the miniature limit of transistor size,integrated circuits face great challenges in achieving the increasing demands for high integration and high data processing capabilities through the strategy of directly reducing channel dimensions.As the dimensions of transistors approach their physical limits,traditional silicon-based channel materials(such as silicon and germanium,etc.)have experienced challenges such as declining electrical performance and rapidly increasing leakage currents,leading to difficulties in improving the data processing capabilities of integrated circuits and a sharp increase in power consumption.As a result,the integrated circuit industry has entered the post-Moore's Law era and urgently needs to find new semiconductor materials to further advance the semiconductor industry.Two-dimensional(2D)transition metal dichalcogenides(TMDCs)materials have excellent physicochemical properties,attracting widespread attention from researchers in the integrated circuit field.Firstly,2D-TMDCs materials have an ultra-thin layered structure similar to graphene,with a smooth surface and no dangling bonds,which can reduce scattering in the transport of charge carriers and effectively suppress the short-channel effects caused by transistor size miniaturization.Secondly,due to their unsuspended bond surfaces,2D-TMDCs can break through the traditional material lattice-matching limitations and form van der Waals heterostructures through stacking,which is advantageous for addressing the challenging issue of performance degradation caused by lattice mismatch in conventional heterostructures.In addition,most 2D-TMDCs semiconductor materials have a moderate band gap of 1-2 eV,which is conducive to the development of low-power electronic devices.It is worth mentioning that,compared to completely replacing silicon,combining 2D-TMDCs devices with mature silicon-based technology and high-performance silicon-based devices,namely developing a compatible route with silicon-based technology,is more feasible and cost-effective for the industrialization of 2D-TMDCs.Currently,with the help of traditional silicon-based technology,significant progress has been made in the controllable fabrication of wafer-scale 2D-TMDCs transistor arrays and logic gate circuit arrays,which preliminarily validates the feasibility of the compatible industrialization route with silicon-based technology.Based on this progress,the 2021 International Roadmap for Devices and Systems(IRDS)explicitly states that 2D-TMDCs materials will be the key materials for the next generation of semiconductor devices,and predicts that they will be integrated with traditional silicon-based materials for industrial manufacturing by 2028.Therefore,establishing a compatible route with silicon-based technology is a necessary prerequisite for the industrialization of 2D-TMDCs integrated circuits.In summary,this review introduces the structural characteristics and performance advantages of 2D-TMDCs materials,as well as their potential applications in integrated circuits in the post-Moore's Law era.It also summarizes the key scientific issues,research progress,and future research directions in 2D-TMDCs electronic devices,and analyzes the comprehensive challenges in the process of industrial application of 2D-TMDCs integrated circuits.
integrated circuitstwo-dimensional transition metal dichalcogenideselectronic devicescompatibility with silicon-based technologies
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