国产功率芯片射频解冻模块设计与应用
Design and application of domestic RF defrosting module
南敬昌 1戴涛 1丛密芳1
作者信息
- 1. 辽宁工程技术大学 电子与信息工程学院,辽宁 葫芦岛 125105
- 折叠
摘要
为提高射频解冻领域相关产品的自主可控能力,基于国产自研横向扩散金属氧化物半导体(lateral diffused metal oxide semiconductors,LDMOS)功率芯片,提出一种由全国产晶体管放大电路构成的大功率射频解冻模块设计方案.该方案核心放大电路部分采用三级级联自研功率放大器,分别为前置级 DS5089、驱动级DS6S0910P和末级DS300AN,并设计大功率射频解冻模块.对模块进行射频性能测试、功能测试以及可靠性测试.研究结果表明:基于国产晶体管设计的模块具备较好的射频性能,饱和输出功率大于 53 dBm,电源转化效率超过 60%,并能在特定时间内快速有效地完成食物解冻.研究结论为射频解冻领域国产晶体管放大电路设计提供参考.
Abstract
In order to improve the independent control ability of related products in the field of RF defrosting,a design scheme of high-power RF defrosting module composed of nationally produced transistor amplifier circuit is proposed based on the domestic self-developed lateral diffused metal oxide semiconductors(LDMOS)power chip.The core amplifier circuit part of this scheme adopts three-stage cascaded self-research power amplifiers,which are DS5089 of the pre-stage,DS6S0910P of the driver stage and DS300AN of the last stage,and the high power RF defrosting module is designed.The RF performance test,function test and reliability test are carried out on the module.The experimental results show that the module designed based on domestic transistor has good RF performance,saturated output power is more than 53 dBm,power conversion efficiency exceeds 60%,and it can quickly and effectively complete the food defrosting within a specific period of time.The research conclusions provide a reference for the design of domestic transistor amplifier circuits in the field of RF defrosting.
关键词
国产化/功率放大器/横向扩散金属氧化物半导体/射频解冻/大功率Key words
localization/power amplifier/lateral diffused metal oxide semiconductors/RF defrosting/high power引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
万方数据