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单晶SiC磁流变弹性抛光垫的磁控抛光性能研究

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将智能可控材料磁流变弹性体(MRE)作为化学机械抛光中的抛光垫,研究不同磁控参数(颗粒类型、颗粒质量分数、颗粒粒径、固化磁场强度)的MRE抛光垫对单晶SiC的磁控抛光效果,并分析MRE抛光垫的磁控材料去除机制.结果表明:相比四氧化三铁磁性颗粒,羰基铁粉(CIP)磁性颗粒制备的MRE抛光垫,在抛光SiC时材料去除率(MRR)提高了 52.2%;CIP质量分数越大,抛光的MRR越大,表面粗糙度越小,抛光的表面质量越好,因为CIP质量分数高时具有更大的材料模量和更多的CIP颗粒接触;不同磁性颗粒粒径的MRE抛光垫磁控抛光效果差异并不大,粒径通过颗粒的大小和接触概率影响着抛光加工的去除效果,这和表面的接触状态有关;相比各向同性MRE,施加固化磁场制备的各向异性MRE能获得更好的磁控抛光效果;在固化磁场为140 mT时制备的MRE抛光垫具有最好的抛光效果,其在抛光磁场为 335 mT的条件下,可使SiC的MRR相比无磁场抛光时提升 31.0%,表面粗糙度下降 50.0%.MRE抛光垫磁控抛光材料的去除机制为,外加磁场增加了MRE抛光垫的机械力学性能,磨料对SiC表面具有更大的切削力和正压力,从而能够获得更大的材料去除.
Study of Magnetron Polishing Performance of Magnetorheological Elastic Polishing Pads for Single-Crystal SiC
Intelligent controllable material magnetorheological elastomers(MRE)were used as polishing pads in chemi-cal-mechanical polishing.The magnetron polishing effect of MRE polishing pads with different magnetron parameters(par-ticle type,particle mass fraction,particle size,and solidified magnetic field strength)on single-crystal SiC was investiga-ted,and the magnetron material removal mechanism of MRE polishing pads was analyzed.The results show that compared to Fe3O4 magnetic particles,MRE polishing pad prepared with carbonyl iron powder(CIP)magnetic particles shows a 52.2％increase in material removal rate(MRR)during SiC polishing.The larger the CIP mass fraction,the larger the MRR of polishing,the smaller the surface roughness,and the better the surface quality of polishing due to a larger material modulus and more CIP particles in contact when the CIP mass fraction is higher.The difference in magnetron polishing effect of MRE polishing pads with different magnetic particle grain sizes is not significant.The grain size influences the re-moval effect of the polishing process through the size of the particles and the contact probability,which is related to the contact state of the surface.Compared to isotropic MREs,anisotropic MRE prepared by applying curing magnetic field can obtain better magnetron polishing effect.The MRE polishing pad prepared at a curing magnetic field of 140 mT has the best polishing effect,which can increase the MRR of SiC by 31.0％and reduce surface roughness by 50.0％under a polishing magnetic field of 335 mT compared to non magnetic field polishing.The material removal mechanism of magnetic control polishing by MRE polishing pad is that the applied magnetic field increases the mechanical properties of the MRE polis-hing pad,and the abrasive has a greater cutting force and positive pressure on the SiC surface,thereby achieving greater material removal.

single-crystal SiCmagnetorheological elastomer polishing padsmagnetron polishingmaterial removal ratesurface roughnesschemical mechanical polishing

李晖龙、路家斌、胡达、雒梓源

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广东工业大学机电工程学院,广东广州 510006

单晶SiC 磁流变弹性体抛光垫 磁控抛光 材料去除率 表面粗糙度 化学机械抛光

国家自然科学基金项目广东省自然科学基金项目广东省攀登计划一般项目

521753852023A1515010923pdjh2024b145

2024

10.3969/j.issn.0254-0150.2024.09.009

润滑与密封
中国机械工程学会 广州机械科学研究院有限公司

润滑与密封

CSTPCD北大核心
影响因子：0.478
ISSN：0254-0150
年,卷(期)：2024.49(9)