同位靶磁控溅射法制备Al掺杂CdSe薄膜
Al-doped CdSe Film Prepared by Magnetron Sputtering with Combined Target
何惠江 1宣乐 1毛高翔 1刘辉 2王春海2
作者信息
- 1. 陕西华秦科技实业股份有限公司,陕西 西安 710048
- 2. 西北工业大学,陕西 西安 710072
- 折叠
摘要
为增加掺杂薄膜的元素均匀性,基于磁控溅射技术,设计了靶材同位共溅射制备掺杂薄膜的方法,并用于制备Al掺杂CdSe薄膜,获得了Al均匀掺杂的CdSe薄膜.结果表明:制备的薄膜为富Se状态,呈现明显的(111)择优取向.Al掺杂后的CdSe薄膜方块电阻由 5.2 kΩ/□升高至 544.5 kΩ/□.随着Al掺杂量的增加,薄膜的方块电阻下降.当共溅射Al片为 6 片时,薄膜方块电阻为 7.7 kΩ/□,薄膜半导体类型由p型转变为n型.掺杂薄膜体电导率分别为192.4(未掺杂)、2.01×104(Al片数 1)、506.9(Al片数 2)、384.8(Al片数 4)、284.9 mΩ·cm(Al片数 6).掺杂薄膜样品的禁带宽度Eg分别为 1.82(未掺杂)、1.97(Al片数 1)、1.75(Al片数 2)、1.78(Al片数 4)、1.82 eV(Al片数 6).
Abstract
To improve the element uniformity of doped films,a method for preparing doped films by combined target co-sputtering was designed based on magnetron sputtering technology and used to prepare Al doped CdSe films.The homogeneous Al doped CdSe films were successfully obtained.The results show that the prepared films are Se-rich with an obvious(111)preferred orientation.The square resistance of CdSe film doped with Al increases from 5.2 kΩ/□to 544.5 kΩ/□,and the square resistance of the film decreases with the increase of Al content.When the Al plates on CdSe target are set to 6 pieces,the square resistance of the Al doped CdSe film is 7.7 kΩ/□,and the type of film changes from p-type to n-type.The doped films show electrical conductivities of 192.4 mΩ·cm(undoped),2.01×104 mΩ·cm(one Al plate on CdSe target),506.9 mΩ·cm(two Al plates on CdSe target),384.8 mΩ·cm(four Al plates on CdSe target)and 284.9 mΩ·cm(six Al plates on CdSe target),respectively.The band gap Eg of the doped film from the reflectance spectra measurement samples are 1.82 eV(undoped),1.97 eV(one Al plate on CdSe target),1.75 eV(two Al plates on CdSe target),1.78 eV(four Al plates on CdSe target)and 1.82 eV(six Al plates on CdSe target),respectively.
关键词
同位靶磁控溅射/Al掺杂CdSe薄膜/电学行为Key words
magnetron sputtering with combined target/Al doped CdSe film/electrical behavior引用本文复制引用
基金项目
国家科技攻关计划项目(J2019-VI-0015-0130)
出版年
2024
NETL
NSTL
万方数据