首页|蜂窝结构半导体热电发生器发电性能分析

蜂窝结构半导体热电发生器发电性能分析

扫码查看
热电发生器作为一种清洁的便携能源装置,在国防军工领域具有较大的发展潜力.为了实现高效和持久的电量输出,基于温差、填充比和截面积比,对仿生蜂窝结构半导体和传统立方体结构半导体的输出功率密度、输入热流量和能量转换效率进行了数值模拟研究.结果表明,空心结构半导体的功率密度总是大于实心结构半导体.在温差为300 K时,蜂窝结构器件的功率密度是传统器件的104.3%.p型热电半导体截面积大于n型半导体截面积,且存在最佳横截面积比以获得能量转换效率的最大值,横截面积比存在最佳值.在300 K、250 K和 50K的温差下,p型半导体与n型半导体的最佳截面积比分别为1.3、1.2 和1.结果显示,蜂窝结构半导体在提高系统可靠性和器件功率质量比上具有一定的研究价值.
Performance analysis of thermoelectric generator with honeycomb structure semiconductors
In order to solve the problem that the monotonous structure of semiconductors is difficult to meet the requirements of diverse applications.The output power density and energy conversion efficiency of thermoelectric devices with bionic honeycomb structure semiconductors and the traditional cube semiconductors are analyzed from temperature difference,filling ratio,and cross-sectional area ratio in order to achieve more efficient and durable power output.The results show that the power density of the hollow semiconductor is always higher than that of the filled semiconductor.Results show that the power density of the device with a hollow semiconductor is 104.3%of that of the conventional one with a filled cuboid semiconductor at a temperature difference of 300 K.The cross-sectional area ratio has an optimal value for energy conversion efficiency.And the cross-sectional area of p-type thermoelectric semiconductors is always greater than that of n-type semiconductors.The optimal cross-sectional area ratio of p-type semiconductors to n-type semiconductors are 1.3,1.2,and 1 at temperature differences of 300 K,250 K,and 50 K.The results show that the honeycomb structure semiconductor is worth researching in improving system reliability and device power to mass ratio.This research promotes the application of thermoelectric generators in lightweight,precise and integrated occasions.

thermoelectric conversionhoneycomb structurepower densitysemiconductorwaste heat recovery

颜廷香、侯智轩、田可、郑丹、王进

展开 >

河北工业大学 能源与环境工程学院,天津 300401

西安交通大学 能源与动力工程学院,西安 710049

热电转换 蜂窝结构 功率密度 半导体 余热回收

国家自然科学基金面上项目河北省杰出青年科学基金项目河北省自然科学基金面上项目

52176067E2022202139E2021202163

2024

兵器装备工程学报
重庆市(四川省)兵工学会 重庆理工大学

兵器装备工程学报

CSTPCD北大核心
影响因子:0.478
ISSN:2096-2304
年,卷(期):2024.45(7)
  • 4