An ultra-weak discontinuous Galerkin(UWDG)method is developed for the drift-diffusion model of the semiconductor problem with the error analysis.The UWDG method has the advantage of the classical discontinuous Galerkin(DG)method.Com-pared to the local discontinuous Galerkin method,this method can solve partial differential equations with higher-order spatial deriva-tives without introducing auxiliary variables,which is simpler in scheme and more direct in calculation.The main technical difficulty is to select the appropriate projection for error analysis.A numerical simulation is performed to validate the numerical stability of the UWDG method.
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