Nonlinear Resistive Switching Mechanism in Ti/TiO2/p-Si Resistive Switching Memory Devices
TiO2 thin film was deposited on p-type silicon(p-Si)substrate by magnetron sputtering technology.Ti top electrode was deposited using hard mask.The resistive switching memory devices with Ti/TiO2/p-Si structure were prepared.The device exhibits stable nonlinear resistance switching characteristics,and the device has a self-rectifying effect.Moreover,the device has a large on/off ratio(larger than 103)and very stable endurance characteristics.The resistive switching mechanisms of the device include space charge limited current conduction and Schottky emission.It is shown that Ti/TiO2/p-Si device is a promising next generation non-volatile memory device.
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