Fabrication and Properties of SnO2/MAPbI3 Planar Heterojunction Photodetectors
SnO2 has been widely studied and applied because of its high conductivity,high transmittance to visible light,large band gap and solvable preparation.However,SnO2 films prepared by spin-coating method have poor wettability,which seriously affects the quality of perovskite photosensitive layer.Ultraviolet-ozone(UVO)treatment can improve the surface wettability of SnO2 thin films,decrease the oxygen vacancy concentration and improve the quality of perovskite photosensitive layer.The SnO2/CH3NH3PbI3 planar heterojunction photodetector was constructed,and the responsivity of 284 mA·W-1 and detectivity of 3.5x 1010 cm·Hz1/2·W-1 were obtained under 0.8 V bias and 490 nm illumination with light intensity of 1.7 mW·cm-2.
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