山东化工2024,Vol.53Issue(4) :48-51.

SnO2/MAPbI3平面异质结光电探测器的制备及性能研究

Fabrication and Properties of SnO2/MAPbI3 Planar Heterojunction Photodetectors

刘健 陶洪
山东化工2024,Vol.53Issue(4) :48-51.

SnO2/MAPbI3平面异质结光电探测器的制备及性能研究

Fabrication and Properties of SnO2/MAPbI3 Planar Heterojunction Photodetectors

刘健 1陶洪1
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作者信息

  • 1. 武汉工程大学材料科学与工程学院,湖北武汉 430205
  • 折叠

摘要

SnO2由于其高导电性、对可见光的高透过率、较大的带隙和可溶液制备等优点一直被广泛研究和应用.但是,旋涂法制备的SnO2薄膜的浸润性较差,严重影响钙钛矿光敏层的成膜质量.采用紫外臭氧(UVO)处理改善SnO2薄膜的表面浸润性,同时可以显著减少其表面氧空位浓度、提高钙钛矿光敏层的成膜质量.构建的SnO2/CH3NH3PbI3平面异质结光电探测器,在0.8 V偏压和光强为1.7 mW· cm-2的490 nm光照下,获得284 mA·W-1的响应率以及3.5×1010 cm·Hz1/2·W-1的探测率.

Abstract

SnO2 has been widely studied and applied because of its high conductivity,high transmittance to visible light,large band gap and solvable preparation.However,SnO2 films prepared by spin-coating method have poor wettability,which seriously affects the quality of perovskite photosensitive layer.Ultraviolet-ozone(UVO)treatment can improve the surface wettability of SnO2 thin films,decrease the oxygen vacancy concentration and improve the quality of perovskite photosensitive layer.The SnO2/CH3NH3PbI3 planar heterojunction photodetector was constructed,and the responsivity of 284 mA·W-1 and detectivity of 3.5x 1010 cm·Hz1/2·W-1 were obtained under 0.8 V bias and 490 nm illumination with light intensity of 1.7 mW·cm-2.

关键词

钙钛矿/紫外臭氧(UVO)处理/光电探测器

Key words

perovskite/ultraviolet-ozone treatment/photodetector

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出版年

2024
山东化工
山东省化工研究院 山东省化工信息中心

山东化工

影响因子:0.249
ISSN:1008-021X
参考文献量16
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