Reactive ion etching is a key technology in the process of preparation of polymer optical waveguide.Based on change of RF power,gas pressure,gas composition and ratio to study the effect of etching of waveguide,the use of level gauge thickness,metallo graphic microscope and SEM observation waveguide section,surface and lateral wall,found the small surface coarse degree,wall smooth,verticality and etching rate moderate optimal etching process parameters.The experimental results show that the etching rate and RF power were positively correlated,and larger with the increase of the pressure,and as the CHF3 in mixed gas of the total increase and decrease;Surface coarse degree of will and with the increase of RF power decreases after bigger first,and the pressure was positively related to relationship,along with the increase in the amount of CHF3 in the mixed gas after the first small amplitude increases dramatically reduce,the final leveling off;The perpendicularity of the waveguide wall will decreases as the RF power showed a trend of small greaten before they are smaller,and the pressure appear significantly larger small amplitude decreasing trend after the first,with the increase of CHF3 content in mixed gas bigger before leveling off.When etching for polymer waveguide CHF3 than Ar has better passivation protection.The experimental results are the preparation of polymer optical waveguide with low loss devices laid a good foundation.
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