The chalcogenide compound SnS has significant potential in optical and thermoelectric applications.In order to improve the thermoelectric properties of SnS,SnS-based thin film doped with SnSe(the atomic fractions are 5％,10％and 20％,respectively)was prepared on flexible mica substrates using chemical vapor deposition.The influence of doping concentration on the morpholo-gy and composition,crystal structure,optical,and thermoelectric properties of the film was system-atically studied using scanning electron microscopy,X-ray diffraction,Raman spectroscopy,and a Seebeck coefficient measurement system.The test results revealed that all samples possess an ortho-rhombic phase.With increased doping,more Se atoms replaced S atoms in the lattice,resulting in an enlargement of the lattice constants.The substitution of Se atoms for S atoms caused a redshift in the Ag vibrational mode.At room temperature,the SnS thin film with 10％SnSe doping exhibited the highest power factor of 0.018 mW/(m·K2),which is a fivefold increase compared to the bulk material.
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