首页|变温霍尔效应实验仪的研制与性能测试

变温霍尔效应实验仪的研制与性能测试

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利用性能优异的半导体热电片,搭建变温霍尔效应实验仪器,可实现在变温环境下(253K~413K)对N型霍尔组件进行霍尔效应相关数据的测量;进而探索霍尔组件的霍尔系数RH(T)、电导率σ(T)、霍尔迁移率μH(T)与温度的关系.仪器可稳定升温和降温,且不需要液氮,既扩充了实验内容又保证了实验安全.实验仪器模块化,不同高校可根据实际情况引入不同的实验内容,实验仪器成本可控.
Development and performance test of variable temperature Hall effect experiment instrument
Using semiconductor thermoelectric chips with excellent performance,an experimental in-strument for Hall effect at variable temperature is built,which can measure the Hall effect related data of N-type Hall module at variable temperature(253K~413K).Furthermore,the relationship between Hall coefficient RH(T),conductivity σ(T)and Hall mobility μH(T)and temperature is explored.The instrument can stably heat up and cool down,and does not need liquid nitrogen,which not only ex-pands the experimental content but also ensures the safety of the experiment.The experimental instru-ments are modular,and different universities can introduce different experimental contents according to the actual situation,and the cost of experimental instruments is controllable.

semiconductorsvariable temperature hall effectHall coefficientelectrical conductivi-tyHall mobility

赵乘暄、张航、胡文柯、梁小冲

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四川大学 物理学院,四川 成都 610065

半导体 变温霍尔效应 霍尔系数 电导率 霍尔迁移率

四川大学新世纪高等教育教学改革工程(第十期)项目四川大学实验技术立项项目

SCU10056SCU221019

2024

实验室科学
南开大学 中国高等教育学会

实验室科学

影响因子:0.805
ISSN:1672-4305
年,卷(期):2024.27(5)