首页|寄生参数对IGBT关断浪涌电压影响的仿真建模

寄生参数对IGBT关断浪涌电压影响的仿真建模

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IGBT作为能源变换与传输的核心器件具有良好的载流与抗压能力,在轨道交通、电力系统等行业领域应用非常广泛.以建模仿真的方式模拟浪涌电压实际运行性能,深入研究其特性,可为提高功率器件系统的安全性与稳定性提供依据.文中通过有限元法求解电磁准静态场提取单桥臂回路各器件的寄生参数,并结合IGBT器件静态、动态特性建立了精确的单桥臂电路模型.通过对比不同精度模型的仿真计算结果表明,寄生参数对于浪涌电压的幅值大小和振荡具有不可忽视的影响,在电路优化设计中应予以充分的关注.该精确模型具有精准、易调控的特点,仿真结果对IGBT功率器件精确的损耗计算、可靠的电磁兼容设计及评估潜在风险具有指导性意义.
Simulation Modeling of Parasitic Parameter Influence to IGBT Surge Voltage During Switching off
As the core device of energy transformation and transmission,IGBT with excellent current carrying capacity and high voltage resistance has been widely used in rail transportation,power system and other industries.In order to improve the safety and stability of power device system,it is of great significance to obtain the actual operating status and performance of the surge voltage by modeling,simulation and deep investigation.In this paper,an accurate single leg circuit model is established with the finite element method to calculate the quasi-static electromagnetic field and extract the parasitic parameters of each circuit in the single leg circuit,fully considering the static and dynamic characteristics of IGBT and the influence of parasitic parameters of each circuit.By comparison modeling tests with different accuracy,it is demonstrated that the parasitic parameters have great influence on the amplitude and oscillation of surge voltage,which should be paid more attention in the circuit optimization design.The simulation model is accurate and adjustable,whose results have great reference value for the loss calculation,EMC design and risk assessment of IGBT power devices.

insulated gate bipolar transistor(IGBT)simulationparasitic parameterssurge voltagepackaging circuit

李岩磊、刘直、李阳、代鹏、陈明远、杜玉亮

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中国铁道科学研究院集团有限公司 机车车辆研究所,北京 100081

北京纵横机电科技有限公司,北京 100094

绝缘栅双极型晶体管(IGBT) 仿真 寄生参数 浪涌电压 封装电路

2024

铁道机车车辆
中国铁道科学研究院 中国铁道学会牵引动力委员会

铁道机车车辆

北大核心
影响因子:0.254
ISSN:1008-7842
年,卷(期):2024.44(1)
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