Study on Surface Polishing Technology of Epitaxial Layer of Three-Junction Gallium Arsenide Solar Cell
The epitaxial surface polishing of space three-junction gallium arsenide(GaAs)cell was taken as the research object.The parameters such as polishing pressure,polishing speed and pH value of polishing liquid were studied.The results show that the polishing liquid with a polishing pressure of 40 g/cm3,a rotating speed of 55 r/min and an effective chlorine content of 5%can be used to obtain a good polishing effect on the epitaxial surface of the three-junction GaAs solar cell.The surface roughness of 0.4 nm and the granularity of less than 50 particles with a particle size greater than 0.2/μm and of less than 100 particles with a particle size less than 0.2/μm can be obtained,which provides a possibility for the mass production of three-junction gallium arsenide solar cells by bonding technology.
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