EMR signal-based method for monitoring the degradation state of SiC MOSFET gate oxide layer
Gate oxide degradation is one of the most common failure forms of silicon carbide metal-oxide-semiconductor field effect transistor(SiC MOSFET),and gate oxide condition monitor is an important guarantee for the safe and stable operation of the power electronic systems.Therefore,this paper proposes a method to monitor the degradation state of SiC MOSFET gate oxide layer based on the electromagnetic radiation(EMR)signal.First,based on the analysis of SiC MOSFET conduction process,the relationship between the degradation degree of gate oxide and the rate of change of drain current is deduced;Second,the SiC MOSFET module is regarded as a magnetic dipole,the EMR signal is measured,and the analysis shows that the gate oxide degradation causes the EMR signal spectrum amplitude to decrease;Finally,a Buck converter composed of SiC MOSFET is used as the object under test,and the EMR signal is captured by a near-field probe,and the degree of gate oxide degradation is monitored according to its spectral amplitude.The experimental results show that the degradation of the gate oxide layer of the SiC MOSFET has a large impact on the EMR signal spectrum in the low frequency band,there is a peak near the resonance point of 6.3 MHz.As the aging degree of the gate oxide layer deepens,the amplitude of the EMR signal spectrum also decreases accordingly.
silicon carbidemetal-oxide-semiconductor field effect transistorgate oxide layer deteriorationelectromagnetic radiation
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