微波学报2024,Vol.40Issue(1) :93-98.DOI:10.14183/j.cnki.1005-6122.202401018

应用于WiFi6的新型高线性度功率放大器设计

A Novel Design of High Linearity Power Amplifier Used in WiFi6

姚凤薇 焦凌彬
微波学报2024,Vol.40Issue(1) :93-98.DOI:10.14183/j.cnki.1005-6122.202401018

应用于WiFi6的新型高线性度功率放大器设计

A Novel Design of High Linearity Power Amplifier Used in WiFi6

姚凤薇 1焦凌彬2
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作者信息

  • 1. 上海电子信息职业技术学院通信与信息工程学院,上海 201411
  • 2. 上海电机学院电子信息学院,上海 201306
  • 折叠

摘要

针对WiFi 6 的设备需求,设计了一款工作在 5.15 GHz~5.85 GHz的高线性度砷化镓异质结双极型晶体管射频功率放大器.为了保证大信号和高温下功率管静态工作点的稳定性,采用了一种新型有源自适应偏置电路.对射频功率检测电路进行了设计和改进,有效降低了射频系统的功耗.针对各次谐波分量产生的影响,对输出匹配网络进行了优化.仿真结果表明:该射频功率放大器芯片小信号增益达到了 32.6 dB;在中心频率5.5 GHz时1dB压缩点功率为30.4 dBm,功率附加效率超过 27.9%;输出功率为 26 dBm时,三阶交调失真低于-40 dBc.实测数据表明:小信号增益大于 31.4 dB;5.5 GHz时1dB压缩点功率为29.06 dBm;输出功率为26 dBm时,三阶交调失真低于-30 dBc.当输出功率为20 dBm时,二次三次谐波抑制到-30 dBc和-45 dBc.

Abstract

A high linearity gallium arsenide heterojuncion bipolar transistor ratio-frequency power amplifier operating at 5.15 GHz~5.85 GHz is designed to meet the equipment requirements of WiFi 6.In order to ensure the stability of the static operating point of the power transistor under high signal and high temperature,a new active adaptive bias circuit is adopted.A novel ratio-frequency power de-tection circuit is designed and improved to reduce the power consumption of the ratio-frequency system.The output matching network is optimized according to the influence of each harmonic component.The simulation results show that the small signal gain of the radio-fre-quency power amplifier chip reaches 32.6 dB.At 5.5 GHz,1 dB compression point power is 30.4 dBm,the additional power efficiency exceeds 27.9%.When the output power is 26 dBm,the third-order intermodulation distortion is lower than-40 dBc.The measured data shows that the small signal gain is greater than 31.4 dB.At 5.5 GHz,1 dB compression point power is 29.06 dBm.When the output power is 26 dBm,third-order intermodulation distortion is lower than-30 dBc.The second and third harmonic component are suppressed to-30 dBc and-45 dBc respectively with 20 dBm output power.

关键词

砷化镓异质结双极型晶体管/偏置电路/功率检测电路/匹配网络/高线性度

Key words

gallium arsenide heterojunction bipolar transistor/bias circuit/power detection circuit/matching network/high linearity

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基金项目

上海自然科学基金(17ZR1411100)

上海电子信息职业技术学院高层次科研启动资助项目(GCC2023027)

出版年

2024
微波学报
中国电子学会

微波学报

CSTPCDCSCD北大核心
影响因子:0.483
ISSN:1005-6122
参考文献量12
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