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复合负反馈技术在宽带有源微波冷噪声源中的应用

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针对C波段宽带有源微波冷噪声源设计中输出低温噪声性能与工作带宽的矛盾,文中选用Avago公司的ATF38143型GaAs基赝掺杂高电子迁移率晶体管(pHEMT)设计了一款C波段宽带有源微波冷噪声源.采用串、并联负反馈电路拓扑结构,在保证低温噪声输出性能的同时提升了工作带宽,其中心频点为6.95 GHz,工作带宽为1.3 GHz,相对带宽为18.7%,常温条件下带内输出最低噪声温度为141.62 K,工作频段可覆盖C波段微波辐射计中心频点为6.60 GHz、6.93 GHz、7.30 GHz 的三个通道.
Application of Complex Negative Feedback Technology in Broadband Active Microwave Cold Noise Source
Aiming at the contradiction between output low temperature noise performance and working bandwidth in the design of C-band broadband active microwave cold noise source,in this paper the ATF38143 GaAs-based pseudomorphic high electron mobility transistor(pHEMT)of Avago company is selected to design a C-band broadband active microwave cold noise source.The series and parallel negative feedback circuit topology improves the working bandwidth while ensuring the low-temperature noise out-put performance.Its center frequency is 6.95 GHz,the working bandwidth is 1.3 GHz,and the relative bandwidth is 18.7%.Its lowest in-band output noise temperature is 141.62 K under the normal temperature conditions,and the working frequency band can cover the three channels of the C-band microwave radiometer center frequency points of 6.60 GHz,6.93 GHz,and 7.30 GHz.

active microwave cold noise sourcemicrowave radiometercalibrationremote sensinghigh electron mobility transistor

崔博、董帅、王振占、王文煜

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中国科学院国家空间科学中心,北京 100190

中国科学院大学电子电气与通信工程学院,北京 100049

有源微波冷噪声源 微波辐射计 定标 遥感 高电子迁移率晶体管

国家自然科学基金

42105130

2024

微波学报
中国电子学会

微波学报

CSTPCD北大核心
影响因子:0.483
ISSN:1005-6122
年,卷(期):2024.40(2)
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