A Ka-band active vector synthesis phase shifter implemented in 65 nm silicon based complementary metal oxide semiconductor process is presented.The circuit is composed of orthogonal coupler,single-ended to differential signal balun,varia-ble gain amplifier and a signal synthesis network.Based on lumped LC equivalent model,the quadrature generator can achieve compact size and obtain high precision orthogonal signal.The variable gain amplifier consisting of digitally controlled cascode topol-ogy is employed to perform precise gain tuning and improve the isolation between input and output.Measured results prove that the phase shifter can cover full 360°with 5.625°phase step and provide accurate phase tuning with root mean square(RMS)phase er-ror＜3°and RMS gain error＜1 dB over 25 GHz～32 GHz.The circuit area is 800 μm×400 μm and the power consumption is 11 mW.
关键词
互补金属氧化物半导体/矢量合成/移相器/可变增益放大器/共源共栅
Key words
complementary metal oxide semiconductor/vector synthesis/phase shifter/variable gain amplifier/cascode
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