A Ka-band continuous wave power amplifier chip is developed by utilizing 0.15 μm Gallium Nitride power MMIC technology manufactured on silicon carbide substrates.The amplifier is designed by adopting a three-stage common source cascade structure.The 16 transistors are used for power combing,which can disperse the heat distribution.To improve output power and added efficiency,the output matching circuit is optimized by a low loss topology.The maximum gain matching is adopted for inter-stage matching,and the small signal gain flatness is also taken into account.In 28 GHz～30 GHz,the small signal gain is 25 dB,the continuous wave output power at 28 V bias voltage is greater than 39 dBm,the power gain is 17 dB,the additional efficiency is greater than 25%and the thermal resistance is 1.41℃/W.When the output power is 35 dBm,the IMD3 is less than-23 dBc,and the chip size is 3.0 mm×3.1 mm.
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