A Broadband Differential Traveling Wave Amplifier Based on the 0.7 μm InP HBT
This paper presents a broadband differential traveling-wave amplifier(TWA)based on 0.7 μm indium phosphide(InP)double-heterojunction bipolar transistor technology.The TWA integrates three gain cells,each designed with a cascode topolo-gy to achieve high gain.An emitter resistive degeneration is incorporated within each gain cell to reach a broad bandwidth.The col-lector bias is slightly below the value for the maximum current gain,which allows a frequency-invariant high-output power characteris-tic with a flat group delay.The TWA exhibits a gain of 13.3 dB ranging from DC to 80.6 GHz.It consumes 84 mA of DC current and an output power at 1 dB compression point(P1 dB)of 11 dBm.Moreover,the group delay satisfies the 12 ps fluctuation in the band-width range,and the flat group delay makes the traveling wave amplifier have important application value in high-speed optical communication systems,and has reference value for promoting the localization process of core devices.
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