SiC MOSFET相对于传统的Si MOSFET开关速度有明显的提升,但开关速度的提升引起电压/电流变化率的增大,器件寄生电感及布线电感等因素对电路的影响日益凸显.当器件自身的电压和电流变化时,会导致栅极-源极间产生预期以外的浪涌电压,从而导致开关管误导通.针对桥式电路上下管的串扰问题设计了一种外接无比较器米勒钳位的SiC MOSFET串扰抑制驱动电路.通过搭建双脉冲测试平台进行了实验验证,实验结果表明,所设计SiC MOSFET串扰抑制驱动电路能够有效抑制上下管之间的串扰,具有重要的工程应用价值.
Design of Crosstalk Suppression Driver Circuit for SiC MOSFET
The switching speed of SiC MOSFET is significantly improved compared with the Si MOSFET,but the increasing of switching speed causes the increase of voltage/current change rate,and the influence of factors such as device parasitic inductance and wiring inductance on the circuit is increasingly prominent.When the voltage and current of the device itself changes,it will lead to the expected surge voltage between the gate and source electrode,which leads to the misdirection of the switching MOSFET.A SiC MOSFET crosstalk suppression drive circuit without comparator Miller clamp was designed to solve the crosstalk prob-lem of the high side and low side MOSFET of the bridge circuit.The experimental results show that the de-signed SiC MOSFET crosstalk suppression drive circuit can effectively suppress the crosstalk between the high side and low side MOSFET,and has important engineering application value.
crosstalk suppressionSiC MOSFETMiller clampno comparatordouble pulse test
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