Thermal Field Analysis of Power Silicon Carbide Devices Based on Separation Variable Method
Aiming at the heating of SiC MOSFET module in motor drive and its heat conduction in its own device.The source and calculation method of power consumption were analyzed,and the power consumption of the power device was calculated.The thermal model of the power device was established,the heat transfer equation was listed and the boundary conditions were determined according to the model properties and pa-rameters.Finally,a method based on the separation variable method to calculate the heat of a certain point in the power device was presented.The numerical calculation results were compared with the actual process measurement results,and the simulation results obtained in Icepak were also compared to verify the accuracy of the calculation method,which provided an effective reference for the selection of power devices and heat calculation in the design stage.
SiC MOSFETheat lossthermal modelthermal calculation
NETL
NSTL
万方数据
