Manufacturing optimization of silicon carbide—a key semiconductor material in 5G communication technology for intelligent metering devices
A new idea was proposed in this paper for improving the growth rate of silicon carbide,which is a key semiconductor material for 5G communication.Physical vapor transport-the key technology of silicon carbide crystal manufacturing was studied.By constructing multiple physical fields including thermal field,flow field and porous media,the flow and heat and mass transfer in the silicon carbide manufacturing process were analyzed.An improved crucible structure was proposed,and several porous carbon tubes were added to the center of the crucible.The calculation results indicate that the new crucible structure can increase the temperature of the powder source in the center of the crucible,facilitate the escape of silicon carbide gas inside the porous powder source,increase the super-saturation of the seed crystal surface,and thus increase the crystal growth rate.
intelligent metering device5G communicationsilicon carbideporous carbon tubenumerical simulationheat and mass transfer
NETL
NSTL
万方数据
