智能计量装置5G通讯技术关键半导体材料碳化硅制造优化
Manufacturing optimization of silicon carbide—a key semiconductor material in 5G communication technology for intelligent metering devices
谭炳源 1郭江 2姚栋方 1肖雄 1陈崇明 1章芳情2
作者信息
- 1. 中国南方电网有限责任公司超高压输电公司检修试验中心,广东广州 510700
- 2. 武汉大学动力与机械学院,湖北武汉 430072
- 折叠
摘要
为提高5G通讯关键半导体材料碳化硅的生长速率提出了一种新的思路,对碳化硅晶体制造的关键技术物理气相运输法进行研究,通过构建包含热场、流场以及多孔介质在内的多物理场,分析了碳化硅生产过程中的流动及传热传质情况,同时提出了一种改进式的坩埚结构,在坩埚中心增加若干多孔碳管.计算结果表明,新坩埚结构能够提高坩埚中心粉源温度,并有利于多孔粉源内部的碳化硅气体逸出,提高籽晶表面的过饱和度,进而提高晶体生长速度.
Abstract
A new idea was proposed in this paper for improving the growth rate of silicon carbide,which is a key semiconductor material for 5G communication.Physical vapor transport-the key technology of silicon carbide crystal manufacturing was studied.By constructing multiple physical fields including thermal field,flow field and porous media,the flow and heat and mass transfer in the silicon carbide manufacturing process were analyzed.An improved crucible structure was proposed,and several porous carbon tubes were added to the center of the crucible.The calculation results indicate that the new crucible structure can increase the temperature of the powder source in the center of the crucible,facilitate the escape of silicon carbide gas inside the porous powder source,increase the super-saturation of the seed crystal surface,and thus increase the crystal growth rate.
关键词
智能计量装置/5G通讯/碳化硅/多孔碳管/数值模拟/传热传质Key words
intelligent metering device/5G communication/silicon carbide/porous carbon tube/numerical simulation/heat and mass transfer引用本文复制引用
基金项目
国家重点研发计划项目(2020YFB1709704)
出版年
2024
NETL
NSTL
万方数据