Abstract
van der Waals(vdW)heterostructures constructed by low-dimensional(0D,1D,and 2D)materials are emerging as one of the most appealing systems in next-generation flexible photodetection.Currently,hand-stacked vdW-type photodetectors are not compatible with large-area-array fabrication and show unimpressive performance in self-powered mode.Herein,vertical 1D GaN nanorods arrays(NRAs)/2D MoS2/PEDOT∶PSS in wafer scale have been proposed for self-powered flexible photodetectors arrays firstly.The as-integrated device without external bias under weak UV illumination exhibits a competitive responsivity of 1.47 A W-1 and a high detectivity of 1.2×1011 Jones,as well as a fast response speed of 54/71 μs,thanks to the strong light absorption of GaN NRAs and the efficient photogenerated carrier separation in type-Ⅱ heterojunction.Notably,the strain-tunable photodetection performances of device have been demonstrated.Impressively,the device at-0.78％strain and zero bias reveals a significantly enhanced photoresponse with a responsivity of 2.47 A W-1,a detectivity of 2.6×1011 Jones,and response times of 40/45 μs,which are superior to the state-of-the-art self-powered flexible photodetectors.This work presents a valuable avenue to prepare tunable vdWs heterostructures for self-powered flexible photodetection,which performs well in flexible sensors.
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