化合物器件高加速温湿度应力(HAST)能力现状研究
Research on Current Situation of Temperature and Humidity Highly Accelerated Stress Test(HAST)Capability of Compound Semiconductors
黄琴琴 1石君1
作者信息
- 1. 成都嘉纳海威科技有限责任公司,四川 成都 610016
- 折叠
摘要
文章基于GaAs pHEMT晶圆工艺现状,根据不同材料特性,从芯片设计、晶圆制程控制、封装材料选择三个维度进行了研究,报告了针对类似材料组合相对复杂的化合物半导体工艺器件在高加速温湿度应力(HAST)能力方面所面临的现状.同时,通过典型案例分析,说明了此类化合物器件在耐湿热能力设计及制程控制上需要注意的关键点,用于类似芯片设计或工艺开发工作进行参考.
Abstract
Based on the current situation of GaAs pHEMT wafer process,this paper studies from three dimensions:chip design,wafer process control,and packaging material selection according to different material characteristics.It reports the current situation faced by compound semiconductors with relatively complex material combinations in terms of temperature and humidity Highly Accelerated Stress Test(HAST)capabilities.Through typical case analysis,the key points that such compound semiconductors need to pay attention to in the design and process control are explained,which can be used for reference in similar chip design or process development work.
关键词
化合物半导体/砷化镓/pHEMT/HAST/耐湿热能力Key words
compound semiconductor/GaAs/pHEMT/HAST/temperature and humidity stress test capability引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
维普
万方数据