电化学沉积WS3薄膜及其忆阻特性研究
Research on Electrochemical Deposition and Memristor Properties of WS3 Thin Film
段尧禹 1万茜1
作者信息
- 1. 江南大学 物联网技术应用教育部工程中心,江苏 无锡 214122
- 折叠
摘要
对基于二维材料的垂直阵列忆阻器进行了研究.面对二维材料生长窗口狭窄,难以制备大面积单晶等挑战,通过可控电化学沉积沉积了大面积WS3 薄膜.基于WS3 薄膜制备了垂直阵列结构忆阻器件.对 2×2 的 4 个忆阻器单元进行I-V特性扫描,均展现出了双极性忆阻特性.开关寿命达1.5×104 次,对于仿神经训练脉冲信号有着明显的响应.大面积二维材料的制备与稳定的忆阻性能为高集成度忆阻器件提供了关键的电学参数与广阔的应用前景.
Abstract
This paper researches a vertical array memristor based on two-dimensional materials.To address challenges like the narrow growth window of two-dimensional materials and the difficulty of producing large-area single crystals,large-area WS3 thin films are deposited through controlled electrochemical deposition.The I-V characteristics of four 2×2 memristor units are scanned,and all of them show bipolar memristor characteristics.The switch life of these devices reach up to 1.5×104 times,and they exhibit a clear response to simulated neural training pulse signals.The achievement of large area two-dimensional materials and the stable performance of the memristor offer crucial electrical parameters and promising application prospect for highly integrated memristor devices.
关键词
忆阻器/WS3/薄膜/阵列/脉冲Key words
memristor/WS3 thin film/array/pulse引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
万方数据