碳化硅功率模块导通电阻和导通压降的测试设备优化
Test Equipment Optimization of RDSON and VF for Silicon Carbide Power Module
李文强1
作者信息
摘要
碳化硅功率模块因其在电力电子领域的卓越性能而备受关注,主要包括高频、高压、耐高温、快速开关和低损耗等特点.为了确保碳化硅功率模块在应用中的可靠性,其静态特性的研究十分重要.因此,针对已经在商用的一款碳化硅功率模块,提出一种新的碳化硅功率模块的导通电阻(RDSON)和续流二极管导通压降(VF)的测试方法,并对碳化硅功率模块的参数测试设备进行改造,可以有效地减少测试时间,降低测试节拍,提高测试效率.
Abstract
Silicon carbide power modules have attracted much attention for their excellent performance in the field of power electronics,mainly including high frequency,high pressure,high temperature resistance,fast switching and low loss characteristics.In order to ensure the reliability of the silicon carbide power modules in application,the study of their static characteristics is very important.Therefore,aiming at a kind of silicon carbide power module already in commercial use,a new test method of RDSON and VF of continuous current diode for silicon carbide power module is proposed,and the parameter test equipment of the silicon carbide power module is modified,which can effectively reduce the test time,reduce the test beat and improve the test efficiency.
关键词
碳化硅功率模块/静态测试/导通电阻/导通压降Key words
silicon carbide power module/static test/RDSON/VF引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
万方数据