Test Equipment Optimization of RDSON and VF for Silicon Carbide Power Module
Silicon carbide power modules have attracted much attention for their excellent performance in the field of power electronics,mainly including high frequency,high pressure,high temperature resistance,fast switching and low loss characteristics.In order to ensure the reliability of the silicon carbide power modules in application,the study of their static characteristics is very important.Therefore,aiming at a kind of silicon carbide power module already in commercial use,a new test method of RDSON and VF of continuous current diode for silicon carbide power module is proposed,and the parameter test equipment of the silicon carbide power module is modified,which can effectively reduce the test time,reduce the test beat and improve the test efficiency.
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