Influence of Bottom Structure of the Guide Tube on Oxygen Contents of Czochralski Monocrystalline Silicon
By using the professional crystal growth software CGSim developed by STR company,it was optimized that the bottom structure of the guide tube components in the thermal field.Mainly we studied two structures at the bottom of the guide tube,the first was the horizontal structure length(X value)at the bottom of the guide tube,the second was the inclined length(Y value)of the bottom structure of the guide tube.The research results indicated that by adjusting the structure at the bottom of the guide tube,the temperature distribution inside the melt was changed,the convective intensity below the free liquid surface was increased,the volatilization of oxygen impurities was accelerated,and the oxygen content of oxygen impurity transport and condensation to the crystal rod was reduced.The results showed that as the X value in-creased,the oxygen contents at the growth interface decreased.As the Y value increased,there was no significant change in the oxygen content at the growth interface.It could be inferred that the X value at the bottom of the guide tube was the key structure that affecting the oxygen content at the growth interface of the crystal rod,and the influence of Y value on oxygen content was relatively weak.The simulation results showed that when the X value was 160 mm,the oxygen content de-creased by a maximum of 0.57 ppma.
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