首页|低温等离子辅助扁桃体及腺样体切除对改善儿童鼾症的临床效果研究

低温等离子辅助扁桃体及腺样体切除对改善儿童鼾症的临床效果研究

扫码查看
目的 探讨低温等离子辅助扁桃体及腺样体切除对改善儿童鼾症的临床效果.方法 回顾性选取2021年1月—2023年12月仙桃第三医院收治的120例鼾症患儿的临床资料,以不同治疗方式分组,每组60例,传统组予以扁桃体剥离术腺样体刮除术,探究组予以低温等离子辅助扁桃体及腺样体切除治疗.对比两组治疗效果.结果 治疗后,探究组手术相关指标、通气功能、生活质量评分均优于传统组,差异有统计学意义(P均<0.05).探究组并发症发生率为5.00%,低于传统组的18.33%,差异有统计学意义(χ2=5.175,P<0.05).结论 低温等离子辅助扁桃体及腺样体切除在治疗儿童鼾症方面具有显著优势,不仅能有效改善患儿手术相关指标和通气功能,还能提高患儿的生活质量,并降低并发症的发生率.
Clinical Effect of Low Temperature Plasma Assisted Tonsil and Adenoidec-tomy on Improving Snoring in Children
Objective To investigate the clinical effect of low temperature plasma assisted tonsil and adenoidectomy on improving snoring in children.Methods The clinical data of 120 children with snoring who were treated in the Xi-antao Third Hospital from January 2021 to December 2023 were retrospectively seleted.They were divided into differ-ent treatment groups,60 cases in each group.The traditional group was treated with tonsillectomy adenoidectomy,and the inquiry group was treated with low-temperature plasma-assisted tonsillectomy and adenoidectomy.The therapeu-tic effects of the two groups were compared.Results After treatment,the operation related indexes,ventilation func-tion and quality scores of life in the inquiry group were better than those in the traditional group,and the differences were statistically significant(all P<0.05).The incidence of complications in the inquiry group was 5.00%,which was lower than 18.33%in the traditional group,and the difference was statistically significant(χ2=5.175,P<0.05).Con-clusion Low temperature plasma assisted tonsil and adenoidectomy has significant advantages in the treatment of snor-ing in children,which can not only effectively improve the operation-related indicators and ventilation function,but also improve the quality of life of children and reduce the incidence of complications.

Snoring in childrenLow temperature plasma technologyTonsilAdenoidectomyClinical effect

周航、李桂平、彭会友

展开 >

仙桃第三医院耳鼻咽喉科,湖北仙桃 433000

儿童鼾症 低温等离子技术 扁桃体切除 腺样体切除 临床效果

2024

系统医学

系统医学

ISSN:
年,卷(期):2024.9(10)