Abstract
Dielectric and energy storage properties of PbO-SrO-Na2O-Nb2O5-SiO2(PSNNS)thin films with anneal-ing temperature from 700 to 850 ℃ were investigated by measuring their capacitance-electric filed curve and hys-teresis loops.The results show that the highest dielectric constant and energy density are 81.2 and 17.0 J·cm-3,respectively,which is obtained in the sample with annealing temperature of 800 ℃.Annealed from 700 to 800 ℃,the dielectric constant and energy storage perfor-mance of PSNNS films are continuously improved.How-ever,with annealing temperature up to 850 ℃,their dielectric constant decreases,which might be related with the removal of interfacial defects as a function of annealing temperature.Defect is one of the causes of space charge phenomenon,resulting in the increase in dielectric con-stant.Moreover,the microstructure analysis by X-ray diffraction(XRD)and transmission electron microscope(TEM)indicates that the change of crystallization phase and interfacial polarization takes responsibility to the results.
基金项目
National Natural Science Foundation of China(51477012)
Beijing Nova Program(xx2016046)
NETL
NSTL
万方数据