首页|Enhanced red luminescence of Ca3Si2-xMxO7∶Eu3+(M=Al,P)phosphors via partial substitution of Si4+for applications in white light-emitting diodes
Enhanced red luminescence of Ca3Si2-xMxO7∶Eu3+(M=Al,P)phosphors via partial substitution of Si4+for applications in white light-emitting diodes
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A red-emitting phosphor Ca2.91Si2O7∶0.09Eu3+with partial Al3+/P5+substitution on Si4+was synthesized via a simple solid-state method,and the effects of the introduction of the M3+/5+(M=Al,P)ions on the crystal structure and photoluminescence performance of Ca2.91Si2-xMxO7∶0.09Eu3+phosphors were investigated.The X-ray diffraction(XRD),energy-dispersive X-ray spectroscopy(EDS),and X-ray photoelectron spectroscopy(XPS)results revealed that the structure of Ca3Si2O7 remained the same after the introduction of Al3+and P5+ions.The characteristic emission of Eu3+-doped Ca3Si2_xMxO7 phosphors exhibited two main peaks at 617 nm(red)and 593 nm(orange)under excitation at 394 nm,which originated from the 5D0 → 7F2 and 5D0 → 7F1 electron transitions of Eu3+ions.After the partial substitution of Al3+and P5+,the red emission intensities of the Ca2.91Si2O7∶0.09Eu3+phosphors were significantly enhanced by 1.88-and 1.42-fold,respectively,which is attributed to the crystal-field effect around Eu3+.Meanwhile,the luminescence intensities of the Ca2.91Si1.96 Al0.04O7∶0.09Eu3+and Ca2.91Si1.94P0.06O7∶0.09Eu3+phos-phors at 210 ℃ were 79.36％and 77.53％of those at 30 ℃,respectively,indicating their excellent thermal sta-bility.Moreover,the as-prepared Ca2.91Si1.96A-l0.04O7∶0.09Eu3+and Ca2.91Si1.94P0.06O7∶0.09Eu3+red-emitting phosphors were combined with a near-ultraviolet chip of 395 nm to fabricate red-light-emitting diode(LED)and white(w)-LED devices with excellent chromaticity features.In summary,Al3+/P5+-substituted Ca2.91Si2O7∶0.09Eu3+can serve as red-emitting phosphors for appli-cations in w-LEDs.
College of Materials and Chemistry and Chemical Engineering,Chengdu University of Technology,Chengdu 610059,China
State Key Laboratory of Geohazard Prevention and Geoenvironment Protection,Chengdu University of Technology,Chengdu 610059,China
International Advanced Energy Science Research and Education Center,Graduate School of Energy Science,Kyoto University,Yoshida-Honmachi,Kyoto 606-8501,Japan
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